|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
MRA1417-11 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRA1417-11 is a Common Base Device Designed for Class C Power Amplifier Applications up to 1.7 GHz. FEATURES INCLUDE: * Gold Metallization * Emitter Ballasting * Input Matching PACKAGE STYLE 250 2L FLG (C) MAXIMUM RATINGS IC VCBO PDISS TJ TSTG JC 4.0 A 50 V 12 W @ TC = 25 C -65 C to +200 C -65 C to +200 C 4.5 C/W 1 = COLLECTOR 2 = BASE 3 = EMITTER CHARACTERISTICS SYMBOL BVCES BVEBO ICBO hFE Cob PG C IC = 80 mA TC = 25 C TEST CONDITIONS IE = 1.0 mA VCB = 28 V VCE = 5.0 V VCB = 28 V VCE = 28 V POUT = 11 W IC = 4.0 A f = 1.0 MHz f = 1700 MHz MINIMUM TYPICAL MAXIMUM 50 3.5 2.0 10 100 12 7.4 45 UNITS V V mA --pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
Price & Availability of MRA1417-11 |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |